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STPS340 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
描述:
功率肖特基整流器 POWER SCHOTTKY RECTIFIER
Pictures:
3D模型
符号图
焊盘图
引脚图
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封装尺寸在P6P7P8P9
标记信息在P1
功能描述在P1
应用领域在P11
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STPS340数据手册
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STPS340 Characteristics
5/11
Figure 13. Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Figure 14. Reverse leakage current versus
reverse voltage applied (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-l) th(j-l)
SMB flat
t (s)
p
Single pulse
I (mA)
R
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 5 10 15 20 25 30 35 40
T
j
=150°C
T
j
=125°C
T
j
=100°C
T
j
=75°C
T
j
=25°C
V (V)
R
Figure 15. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 16. Forward voltage drop versus
forward current
Figure 17. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, e
CU
= 35 µm) (DPAK)
Figure 18. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, e
CU
= 35 µm)
(SMB / SMC)
10
100
1000
1 10 100
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
I (A)
FM
0
0
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
j
=25°C
(Maximum values)
T
j
=125°C
(Typical values)
T
j
=125°C
(Typical values)
T
j
=125°C
(Maximum values)
V (V)
FM
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S (cm²)
CU
DPAK
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
SMB / SMC
S (cm²)
CU
R (°C/W)
th(j-a)
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