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STTH1R06_07 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
描述:
TURBO 2超快高压整流 Turbo 2 ultrafast high voltage rectifier
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封装尺寸在P6P7
标记信息在P1
功能描述在P1
应用领域在P9
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STTH1R06_07数据手册
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July 2007 Rev 4 1/9
9
STTH1R06
Turbo 2 ultrafast high voltage rectifier
Features and benefits
■ Ultrafast switching
■ Low reverse recovery current
■ Low thermal resistance
■ Reduces switching and conduction losses
Description
The STTH1R06, which uses ST Turbo 2 600 V
technology, is especially suited as a boost diode
in power factor correction circuitry.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
Table 1. Main product characteristics
I
F
(AV) 1 A
V
RRM
600 V
I
R
(max) 75 µA
T
j
175° C
V
F
(typ) 1.0 V
t
rr
(max) 25 ns
Table 2. Order codes
Part number Marking
STTH1R06 STTH1R06
STTH1R06RL STTH1R06
STTH1R06A HR6
STTH1R06U BR6
DO-41
STTH1R06
SMA
STTH1R06A
SMB
STTH1R06U
K
K
K
A
A
A
Table 3. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
RMS forward voltage
DO-41 10
A
SMA / SMB 7
I
F(AV)
Average forward current
DO-41 Tc = 100° C δ = 0.5
1ASMA Tc = 125° C δ = 0.5
SMB Tc = 135° C δ = 0.5
I
FSM
Surge non repetitive forward current
DO-41
tp = 10ms sinusoidal
25
A
SMA / SMB 20
T
stg
Storage temperature range -65 to + 175 ° C
T
j
Maximum operating junction temperature 175 ° C
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