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STW20NK50Z 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-247-3
描述:
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STW20NK50Z数据手册
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Electrical characteristics STW20NK50Z
4/12 Doc ID 023061 Rev 1
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
=1 mA, V
GS
= 0 500 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 500 V
V
DS
= 500 V, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ± 10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA 3 3.75 4.5 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 8.5 A 0.23 0.27 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
2600
328
72
pF
pF
pF
C
oss eq.
(1)
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Equivalent output
capacitance
V
DS
=0, V
DS
= 0 to 640 V - 187 pF
t
d(on)
t
r
t
d(off)
t
f
Tur n -on delay t i m e
Rise time
Turn-off delay time
Fall time
V
DD
= 250 V, I
D
= 8.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 14)
-
28
20
70
15
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 17 A,
V
GS
= 10 V
(see Figure 15)
-
85
15.5
42
119 nC
nC
nC
4 / 12
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