Datasheet 搜索 > 时钟缓冲器、驱动器、锁相环 > Microchip（微芯） > SY58011UMG 数据手册 > SY58011UMG 数据手册 3/10 页
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SY58011UMG 数据手册 - Microchip（微芯）
制造商:
Microchip（微芯）
分类:
时钟缓冲器、驱动器、锁相环
封装:
QFN-16
描述:
SY58011U 系列 7 GHz 1:2 CML 扇出缓冲器/转换器 - MLF-16
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SY58011UMG数据手册
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3
SY58011U
Micrel, Inc.
M9999-110311
hbwhelp@micrel.com or (408) 955-1690
Absolute Maximum Ratings
(Note 1)
Power Supply Voltage (V
CC
) ....................... –0.5V to +4.0V
Input Voltage (V
IN
) ......................................... –0.5V to V
CC
CML Output Voltage (V
OUT
) ........... V
CC
–1.0V to V
CC
+0.5V
Current (V
T
)
Source or sink current on V
T
pin........................ ±100mA
Input Current
Source or sink current on IN, /IN ......................... ±50mA
Current (V
REF
)
Source or sink current on V
REF
-AC, Note 4 ....... ±1.5mA
Lead Temperature Soldering, (20 seconds) ............. 260°C
Storage Temperature Range (T
STORE
) ... –65°C to +150°C
Operating Ratings
(Note 2)
Supply Voltage (V
CC
) ............................+2.375V to +3.60V
Operating Temperature Range (T
A
) .......... –40°C to +85°C
Package Thermal Resistance, Note 3
QFN (θ
JA
)
Still-Air ............................................................ 60°C/W
500lfpm ........................................................... 54°C/W
QFN (ψ
JB
)........................................................... 33°C/W
T
A
= –40°C to +85°C
Symbol Parameter Condition Min Typ Max Units
V
CC
Power Supply Voltage 2.375 3.60 V
I
CC
Power Supply Current Max. V
CC
, no load 75 95 mA
V
IH
Input HIGH Voltage IN, /IN, Note 6 V
CC
–1.6 V
CC
V
V
IL
Input LOW Voltage IN, /IN 0 V
IH
–0.1 V
V
IN
Input Voltage Swing see Figure 1a. 0.1 1.7 V
V
DIFF_IN
Differential Input Voltage Swing see Figure 1b. 0.2 V
R
IN
Into V
T
Resistance 40 50 60 ý
V
REF
-AC Output Reference Voltage V
CC
–1.3 V
CC
–1.2 V
CC
–1.1 V
IN to V
T
1.28 V
DC ELECTRICAL CHARACTERISTICS
(Note 5)
V
CC
= 3.3V ±10% or 2.5V ±5%; T
A
= –40°C to +85°C; R
L
= 100ý across each output pair, or equivalent, unless otherwise stated.
Symbol Parameter Condition Min Typ Max Units
V
OH
Output HIGH Voltage Q0, /Q0, Q1, /Q1 V
CC
–0.020 V
CC
–0.010 V
CC
V
V
OUT
Output Voltage Swing Q0, /Q0, Q1, /Q1; see Figure 1a. 325 400 mV
V
DIFF_OUT
Differential Output Voltage Swing Q0, /Q0, Q1, /Q1; see Figure 1b. 650 800 mV
R
OUT
Output Source Impedance Q0, /Q0, Q1, /Q1 40 50 60 ohms
Notes:
1. Permanent device damage may occur if absolute maximum ratings are exceeded. This is a stress rating only and functional operation is not
implied at conditions other than those detailed in the operational sections of this data sheet. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability.
2. The data sheet limits are not guaranteed if the device is operated beyond the operating ratings.
3. Thermal performance assumes exposed pad is soldered (or equivalent) to the device’s most negative potential (gnd) on the pcb.
4. Due to the limited drive capability, use for input of the same package only.
5. The circuit is designed to meet the dc specifications shown in the above table after thermal equilibrium has been established.
6. V
IH
(min) not lower than 1.2V.
CML DC ELECTRICAL CHARACTERISTICS
(Note 5)
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