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TIP105 数据手册 - Central Semiconductor
制造商:
Central Semiconductor
分类:
双极性晶体管
封装:
TO-220-3
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TIP105数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= -30 V -50 µA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= -60 V -50 µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -8 mA
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= -30 mA -60 V
V
CE(sat)
* Collector-Emitter
Saturation Voltage
I
C
= -3 A I
B
= -6 mA
I
C
= -8 A I
B
= -80 mA
-2
-2.5
V
V
V
BE
* Base-Emitter Voltage I
C
= -8 A V
CE
= -4 V -2.8 V
h
FE
* DC Current Gain I
C
= -3 A V
CE
= -4 V
I
C
= -8 A V
CE
= -4 V
I
C
= -3 A V
CE
= -4 V
Group R
Group O
Group Y
2000
200
2000
4000
8000
18000
5000
9000
18000
V
F
* Forward Voltage of
Commutation Diode
(I
B
= 0)
I
F
= - I
C
= 10 A -2.8 V
The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
Safe Operating Area DC Current Gain
TIP105
2/5
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