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TIP122TU 数据手册 - ON Semiconductor(安森美)
制造商:
ON Semiconductor(安森美)
分类:
双极性晶体管
封装:
TO-220-3
描述:
复合 NPN 晶体管,Fairchild Semiconductor### 双极晶体管,Fairchild Semiconductor双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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TIP122TU数据手册
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TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120 / TIP121 / TIP122 Rev. 1.1.0
November 2014
TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP120 TIP120 TO-220 3L (Single Gauge) Bulk
TIP120TU TIP120 TO-220 3L (Single Gauge) Rail
TIP121 TIP121 TO-220 3L (Single Gauge) Bulk
TIP121TU TIP121 TO-220 3L (Single Gauge) Rail
TIP122 TIP122 TO-220 3L (Single Gauge) Bulk
TIP122TU TIP122 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
TIP120 60
VTIP121 80
TIP122 100
V
CEO
Collector-Emitter Voltage
TIP120 60
VTIP121 80
TIP122 100
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 5 A
I
CP
Collector Current (Pulse) 8 A
I
B
Base Current (DC) 120 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1
R2
R1 8kΩ≅
R2 0.12kΩ≅
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