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TL431CDR2G 数据手册 - ON Semiconductor（安森美）
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电压基准芯片
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TL431CDR2G数据手册
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of 20 Go
若手册格式错乱，请下载阅览PDF原文件
TL431, A, B Series, NCV431A, B
http://onsemi.com
2
Representative Block Diagram
1.0 k
Cathode
(K)
2.5 V
ref
Anode (A)
Reference
(R)
4.0 k
150
Symbol
10 k
20 pF
800
Cathode (K)
3.28 k
Representative Schematic Diagram
Component values are nominal
Anode (A)
-
+
Anode
(A)
800
Reference
(R)
2.4 k 7.2 k
20 pF
800
Cathode
(K)
Reference
(R)
This device contains 12 active transistors.
MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.)
Rating
Symbol Value Unit
Cathode to Anode Voltage V
KA
37 V
Cathode Current Range, Continuous I
K
-100 to +150 mA
Reference Input Current Range, Continuous I
ref
-0.05 to +10 mA
Operating Junction Temperature T
J
150 °C
Operating Ambient Temperature Range
T
A
°C
TL431I, TL431AI, TL431BI -40 to +85
TL431C, TL431AC, TL431BC 0 to +70
NCV431AI, NCV431B, TL431BV -40 to +125
Storage Temperature Range T
stg
-65 to +150 °C
Total Power Dissipation @ T
A
= 25°C P
D
W
Derate above 25°C Ambient Temperature
D, LP Suffix Plastic Package 0.70
P Suffix Plastic Package 1.10
DM Suffix Plastic Package 0.52
Total Power Dissipation @ T
C
= 25°C P
D
W
Derate above 25°C Case Temperature
D, LP Suffix Plastic Package 1.5
P Suffix Plastic Package 3.0
ESD Rating HBM
MM
>2000
>200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Condition Symbol Min Max Unit
Cathode to Anode Voltage V
KA
V
ref
36 V
Cathode Current I
K
1.0 100 mA
THERMAL CHARACTERISTICS
Characteristic Symbol
D, LP Suffix
Package
P Suffix
Package
DM Suffix
Package
Unit
Thermal Resistance, Junction-to-Ambient
R
q
JA
178 114 240 °C/W
Thermal Resistance, Junction-to-Case
R
q
JC
83 41 - °C/W
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