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TLE4250G 数据手册 - Siemens Semiconductor（西门子）
制造商:
Siemens Semiconductor（西门子）
封装:
SCT-595-5
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TLE4250G数据手册
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TLE 4250 G
Data Sheet Rev. 2.2 6 2000-10-04
Electrical Characteristics
V
I
= 13.5 V; V
ADJ
>2.5V; – 40 °C<T
j
<150°C; unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Output
Output voltage tracking
accuracy
∆V
Q
= V
ADJ
– V
Q
∆V
Q
– 25 – 25 mV 6 V < V
I
< 28 V
1 mA
< I
Q
< 50 mA
Output voltage tracking
accuracy
∆V
Q
– 25 – 25 mV 6 V < V
I
< 40 V
1 mA <
I
Q
< 10 mA
Output voltage tracking
accuracy
∆V
Q
– 5 – 5mV6 V < V
I
< 16 V
1 mA
< I
Q
< 10 mA
Drop voltage
V
dr
– 100 300 mV I
Q
= 10 mA;
V
ADJ
>4V
1)
Output current I
Q
50 70 – mA
1)
T
j
<125°C
Output capacitor
C
Q
1 ––µF at 10 kHz;
2
Ω ≤ ESR ≤ 7 Ω
Current consumption
I
q
= I
I
– I
Q
I
q
– 1.5 3.0 mA I
Q
< 30 mA
Current consumption
I
q
= I
I
– I
Q
I
q
– 80 150 µA I
Q
< 1 mA
Quiescent current
(stand-by)
I
q
= I
I
– I
Q
I
q
– 10 20 µA V
ADJ
= 0 V
T
j
< 85 °C
Current consumption
(drop area)
I
q
––3mAV
ADJ
= V
I
=5V
I
Q
= 0 mA
Load regulation
∆V
Q
– 15 – 15 mV 1 mA < I
Q
< 30 mA
Line regulation
∆V
Q
– 10 – 10 mV 6 V < V
I
< 40 V
I
Q
= 10 mA
1)
Measured when the output voltage V
Q
has dropped 100 mV from the nominal value.
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