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TLE42764DV 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
稳压芯片
封装:
TO-252-5
描述:
INFINEON TLE42764DV 电压稳压器, LDO, 可调, 4.5V至40V输入, 250mV压差, 2.5V至20V/0.4A输出, TO-252-5
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TLE42764DV数据手册
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Data Sheet 6 Rev. 1.3, 2013-07-30
TLE42764
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Table 1 Absolute Maximum Ratings
1)
T
j
= -40 °C to 150 °C; all voltages with respect to ground, (unless otherwise specified)
1) not subject to production test, specified by design
Pos. Parameter Symbol Limit Values Unit Test Condition
Min. Max.
Input I, Enable EN
4.1.1 Voltage
V
I
-42 45 V –
Voltage Adjust Input VA
4.1.2 Voltage
V
VA
-0.3 10 V –
Output Q
4.1.3 Voltage
V
Q
-1 40 V –
Temperature
4.1.4 Junction temperature
T
j
-40 150 °C–
4.1.5 Storage temperature
T
stg
-50 150 °C–
ESD Susceptibility
4.1.6 ESD Absorption
V
ESD,HBM
-3 3 kV Human Body Model
(HBM)
2)
2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114
4.1.7 V
ESD,CDM
-1000 1000 V Charge Device
Model (CDM)
3)
at all
pins
3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1
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