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TLP281 数据手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
二极管
封装:
SOP-4
描述:
TLP281 SOP4 marking/标记 P281
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TLP281数据手册
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TLP281,TLP281-4
2010-08-27 3
Absolute Maximum Ratings
(Ta = 25°C)
RATING
CHARACTERISTIC SYMBOL
TLP281 TLP281−4
UNIT
Forward Current I
F
50 mA
Forward Current Derating ∆I
F
/°C −0.7 (Ta≥53°C) −0.5 (Ta≥25°C) mA /°C
Pulse Forward Current (Note 1) I
FP
1 A
Reverse Voltage V
R
5 V
LED
Junction Temperature T
j
125 °C
Collector-Emitter Voltage V
CEO
80 V
Emitter-Collector Voltage V
ECO
7 V
Collector Current I
C
50 mA
Collector Power Dissipation
(1 Circuit)
P
C
150 100 mW
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
∆P
C
/°C −1.5 −1.0 mW /°C
DETECTOR
Junction Temperature T
j
125 °C
Operating Temperature Range T
opr
−55 to 100 °C
Storage Temperature Range T
stg
−55 to 125 °C
Lead Soldering Temperature T
sol
260 (10s) °C
Total Package Power Dissipation
(1 Circuit)
P
T
200 170 mW
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
∆P
T
/°C −2.0 −1.7 mW /°C
Isolation Voltage (Note 2) BV
S
2500(AC,1min,R.H.≤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width ≤ 100μs, frequency 100Hz
(Note 2) AC, 1 minute, R.H.≤60%,Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse Current I
R
V
R
= 5 V
—
— 10 μA
LED
Capacitance C
T
V = 0, f = 1 MHz
—
30 — pF
Collector-Emitter
Breakdown Voltage
V
(BR) CEO
I
C
= 0.5 mA 80
— —
V
Emitter-Collector
Breakdown Voltage
V
(BR) ECO
I
E
= 0.1 mA 7
— —
V
V
CE
= 48 V,
Ambient Light Below
(100 ℓx) (Note 4)
—
0.01
(2)
0.1
(10)
μA
Collector Dark Current
(Note 3)
I
CEO
V
CE
= 48 V, Ta = 85°C
Ambient Light Below
(100 ℓx) (Note 4)
—
2
(4)
50
(50)
μA
DETECTOR
Capacitance
(Collector to Emitter)
C
CE
V = 0, f = 1 MHz
—
10 — pF
(Note 3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
(Note 4)Irradiation to marking side using standard light bulb.
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