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TLV1117LV33DCYR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
稳压芯片
封装:
TO-261-4
描述:
TEXAS INSTRUMENTS TLV1117LV33DCYR 固定电压稳压器, LDO, 2V至5.5V, 455mV压差, 3.3V输出, 1A输出, SOT-223-4
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引脚图
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页面导航:
引脚图在P3Hot
典型应用电路图在P1P13
原理图在P11
封装尺寸在P18P20P21
标记信息在P18P19
封装信息在P1P16P17P18P19P20P21
技术参数、封装参数在P4
应用领域在P1P24
电气规格在P5
导航目录
TLV1117LV33DCYR数据手册
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Current
Limit
Bandgap
Thermal
Shutdown
IN
OUT
LOGIC
GND
TLV1117LV Series
UVLO
TLV1117LV
www.ti.com
SBVS160B –MAY 2011–REVISED FEBRUARY 2015
7 Detailed Description
7.1 Overview
The TLV1117LV family of devices are a series of low quiescent current, high PSRR LDOs capable of handling up
to 1 A of load current. These devices feature an integrated current limit, thermal shutdown, bandgap reference,
and UVLO circuit blocks.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Internal Current Limit
The TLV1117LV internal current limit helps to protect the regulator during fault conditions. During current limit,
the output sources a fixed amount of current that is largely independent of the output voltage. In such a case, the
output voltage is not regulated, and can be calculated by the formula: V
OUT
= I
LIMIT
× R
LOAD
. The PMOS pass
transistor dissipates (V
IN
– V
OUT
) × I
LIMIT
until thermal shutdown is triggered and the device turns off. As the
device cools down, it is turned on by the internal thermal shutdown circuit. If the fault condition continues, the
device cycles between current limit and thermal shutdown. See the Thermal Information section for more details
The PMOS pass element in the TLV1117LV device has a built-in body diode that conducts current when the
voltage at OUT exceeds the voltage at IN. This current is not limited; if extended reverse voltage operation is
anticipated, external limiting to 5% of the rated output current is recommended.
7.3.2 Dropout Voltage
The TLV1117LV uses a PMOS pass transistor to achieve low dropout. When (V
IN
– V
OUT
) is less than the
dropout voltage (V
DO
), the PMOS pass device is in the linear region of operation and the input-to-output
resistance is the R
DS(ON)
of the PMOS pass element. V
DO
scales approximately with output current because the
PMOS device behaves as a resistor in dropout.
As with any linear regulator, PSRR and transient response are degraded as (V
IN
– V
OUT
) approaches dropout.
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