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TLV271SN1T1G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
运算放大器
封装:
TSOT-23-5
描述:
TLV271，16V 低噪声，低偏置电流，3.5MHz，低功率，运算放大器，ON Semiconductor轨对轨输出 带宽：3 MHz 电源 2.7 V 至 16 V 低电源电流：550 μA 宽带放大应用 ### 运算放大器，ON Semiconductor
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TLV271SN1T1G数据手册
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若手册格式错乱，请下载阅览PDF原文件
TLV271
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS (V
DD
= 2.7V, 3.3V, 5V & $5 V (Note 3), T
A
= 25°C, R
L
w 10 kW unless otherwise noted)
Parameter UnitMaxTypMinConditionsSymbol
Output Current I
O
V
O
= 0.5 V from rail, V
DD
= 2.7 V
Positive rail 4.0
mA
Negative rail 5.0
V
O
= 0.5 V from rail, V
DD
= 5 V
Positive rail 7.0
Negative rail 8.0
V
O
= 0.5 V from rail, V
DD
= 10 V
Positive rail 13
Negative rail 12
Power Supply
Quiescent Current
I
DD
V
O
= V
DD
/2
V
DD
= 2.7 V 380 560 mA
V
DD
= 3.3 V 385 620
V
DD
= 5 V 390 660
V
DD
= 10 V
400 800
T
A
= −40°C to +105°C 1000
3. V
DD
= ±5 V is shorthand for V
DD
= +5 V and V
EE
= −5 V.
AC ELECTRICAL CHARACTERISTICS (V
DD
= 2.7 V, 5 V, & $5 V (Note 4), T
A
= 25°C, and R
L
w 10 kW unless otherwise noted)
Parameter
Symbol Conditions Min Typ Max Unit
Unity Gain
Bandwidth
UGBW
R
L
= 2 kW, C
L
= 10 pF V
DD
= 2.7 V 3.2
MHz
V
DD
= 5 V to
10 V
3.5
Slew Rate at Unity
Gain
SR
V
O(pp)
= V
DD
/2, R
L
= 10 kW, C
L
= 50 pF
V
DD
= 2.7 V
1.35 2.1 V/mS
T
A
= −40°C to +105°C 1
V
O(pp)
= V
DD
/2, R
L
= 10 kW, C
L
= 50 pF
V
DD
= 5 V
1.45 2.3
T
A
= −40°C to +105°C 1.2
V
O(pp)
= V
DD
/2, R
L
= 10 kW, C
L
= 50 pF
V
DD
= $5 V
1.8 2.6
T
A
= −40°C to +105°C 1.3
Phase Margin
q
m
R
L
= 2 kW, C
L
= 10 pF
45 °
Gain Margin
R
L
= 2 kW, C
L
= 10 pF
14 dB
Settling Time to
0.1%
t
S
V−step(pp) = 1 V, AV = −1, R
L
= 2 kW,
C
L
= 10 pF
V
DD
= 2.7 V 2.9 mS
V−step(pp) = 1 V, AV = −1, R
L
= 2 kW,
C
L
= 47 pF
V
DD
= 5 V,
$5 V
2.0
Total Harmonic
Distortion plus
Noise
THD+N
V
DD
= 2.7 V, V
O(pp)
= V
DD
/2, R
L
= 2 kW,
f = 10 kHz
AV = 1 0.004
%
AV = 10 0.04
AV = 100 0.3
V
DD
= 5 V, $ 5 V, V
O(pp)
= V
DD
/2, R
L
=
2 kW, f = 10 kHz
AV = 1 0.004
AV = 10 0.04
AV = 100 0.03
Input−Referred
Voltage Noise
e
n
f = 1 kHz 30
nV/√Hz
f = 10 kHz 20
Input−Referred
Current Noise
i
n
f = 1 kHz 0.6 fA/√Hz
4. V
DD
= ±5 V is shorthand for V
DD
= +5 V and V
EE
= −5 V.
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