Datasheet 搜索 > 负载控制器 > TI（德州仪器） > TPS2052BDR 数据手册 > TPS2052BDR 数据手册 4/51 页
器件3D模型￥ 1.861
TPS2052BDR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
负载控制器
封装:
SOIC-8
描述:
TEXAS INSTRUMENTS TPS2052BDR 芯片, 限流配电开关, 5.5V 8-SOIC, 整卷
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P18
原理图在P5P6P8P10
封装尺寸在P30P31P32P33P35P36P37
标记信息在P30P31P32P33P34
封装信息在P2P30P31P32P33P34P35P36P37
技术参数、封装参数在P2
应用领域在P1P20P27P34P51
电气规格在P3P4
导航目录
TPS2052BDR数据手册
Page:
of 51 Go
若手册格式错乱，请下载阅览PDF原文件
TPS2041B, TPS2042B
TPS2043B, TPS2044B, TPS2051B
TPS2052B, TPS2053B, TPS2054B
SLVS514L –JUNE 2010–REVISED JUNE 2011
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
over recommended operating junction temperature range, V
I(IN)
= 5.5 V, I
O
= 0.5 A, V
I(/ENx)
= 0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
(1)
MIN TYP MAX UNIT
SUPPLY CURRENT (TPS2042B, TPS2052B)
T
J
= 25°C 0.5 1
Supply current, low-level output No load on OUT, V
I(ENx)
= 5.5 V μA
-40°C ≤ T
J
≤ 125°C 0.5 5
T
J
= 25°C 50 70
Supply current, high-level output No load on OUT, V
I(ENx)
= 0 V μA
-40°C ≤ T
J
≤ 125°C 50 90
Leakage current OUT connected to ground, V
I(ENx)
= 5.5 V -40°C ≤ T
J
≤ 125°C 1 μA
Reverse leakage current V
I(OUTx)
= 5.5 V, IN = ground T
J
= 25°C 0.2 μA
SUPPLY CURRENT (TPS2043B, TPS2053B)
T
J
= 25°C 0.5 2
Supply current, low-level output No load on OUT, V
I(ENx)
= 0 V μA
-40°C ≤ T
J
≤ 125°C 0.5 10
T
J
= 25°C 65 90
Supply current, high-level output No load on OUT, V
I(ENx)
= 5.5 V μA
-40°C ≤ T
J
≤ 125°C 65 110
Leakage current OUT connected to ground, V
I(ENx)
= 0 V -40°C≤ T
J
≤ 125°C 1 μA
Reverse leakage current V
I(OUTx)
= 5.5 V, INx = ground T
J
= 25°C 0.2 μA
SUPPLY CURRENT (TPS2044B, TPS2054B)
T
J
= 25°C 0.5 2
No load on OUT, V
I(ENx)
= 5.5 V,
Supply current, low-level output μA
or V
I(ENx)
= 0 V
-40°C ≤ T
J
≤ 125°C 0.5 10
T
J
= 25°C 75 110
No load on OUT, V
I(ENx)
= 0 V,
Supply current, high-level output μA
or V
I(ENx)
= 5.5 V
-40°C ≤ T
J
≤ 125°C 75 140
OUT connected to ground, V
I(ENx)
= 5.5 V,
Leakage current -40°C≤ T
J
≤ 125°C 1 μA
or V
I(ENx)
= 0 V
Reverse leakage current V
I(OUTx)
= 5.5 V, INx = ground T
J
= 25°C 0.2 μA
UNDERVOLTAGE LOCKOUT
Low-level input voltage, IN, INx 2 2.5 V
Hysteresis, IN, INx T
J
= 25°C 75 mV
OVERCURRENT OC and OCx
Output low voltage, V
OL(/OCx)
I
O(OCx)
= 5 mA 0.4 V
Off-state current V
O(OCx)
= 5 V or 3.3 V 1 μA
OC deglitch OCx assertion or deassertion 4 8 15 ms
THERMAL SHUTDOWN
(2)
Thermal shutdown threshold 135 °C
Recovery from thermal shutdown 125 °C
Hysteresis 10 °C
(2) The thermal shutdown only reacts under overcurrent conditions.
4 Copyright © 2010–2011, Texas Instruments Incorporated
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
