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TPS62177DQCR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
稳压芯片
封装:
WSON-10
描述:
TEXAS INSTRUMENTS TPS62177DQCR 直流-直流开关降压, 逐步递降稳压器, 可调, 4.75V-28V输入, 1V-6V/500mA输出, 1MHz, WSON-10 新
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TPS62177DQCR数据手册
Page:
of 38 Go
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TPS62175
,
TPS62177
www.ti.com
SLVSB35C –OCTOBER 2012–REVISED JULY 2015
7.5 Electrical Characteristics
Over free-air temperature range (T
A
= –40°C to 85°C) and V
IN
= 4.75 V to 28 V. Typical values at V
IN
= 12 V and T
A
= 25°C
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input voltage range 4.75 28 V
Operating quiescent EN = High, SLEEP = High, I
OUT
= 0 mA, device not switching
I
Q
22 36 µA
current
Sleep mode quiescent EN = High, SLEEP = Low, I
OUT
= 0 mA, device not switching
I
Q_SLEEP
4.8 10 µA
current
I
SD
Shutdown current EN = Low, current into VIN pin 1.5 5 µA
Rising input voltage 4.5 4.6 4.7 V
Undervoltage lockout
V
UVLO
threshold
Falling input voltage 2.9 V
Thermal shutdown Rising junction temperature
150
temperature
T
SD
°C
Thermal shutdown
20
hysteresis
CONTROL (EN, PG, SLEEP)
High level input
V
H
threshold voltage (EN, 0.9 V
SLEEP)
Low level input
V
L
threshold voltage (EN, 0.3 V
SLEEP)
Input leakage current
I
LKG_EN
EN = V
IN
5 300 nA
(EN)
Input leakage current
I
LKG_SLEEP
V
SLEEP
= 3.3 V 1.4 µA
(SLEEP)
Rising (%V
OUT
) 93% 96% 99%
Power good threshold
V
TH_PG
voltage
Falling (%V
OUT
) 87% 90% 93%
Power good output low
V
OL_PG
I
PG
= –2 mA 0.3 V
voltage
Input leakage current
I
LKG_PG
V
PG
= 5 V 5 300 nA
(PG)
POWER SWITCH
High-side MOSFET
V
IN
≥ 6 V 850 1430 mΩ
ON-resistance
R
DS(ON)
Low-side MOSFET
V
IN
≥ 6 V 320 530 mΩ
ON-resistance
Normal operation 800 1000 1200
High-side MOSFET
I
LIMF
mA
current limit
Start-up mode 450 525 600
OUTPUT
V
OUT
Output voltage range V
IN
≥ V
OUT
1 6 V
(TPS62175)
V
REF
Internal reference
0.8 V
voltage
I
OUT_SLEEP
Output current in sleep SLEEP = Low, V
OUT
= 3.3 V, L = 10 µH
15 mA
mode
Input leakage current
I
LKG_FB
V
FB
= 0.8 V 1 100 nA
(FB)
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