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TXS0102DQER 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
电压电平转换器
封装:
XFDFN-8
描述:
TEXAS INSTRUMENTS TXS0102DQER 芯片, 电平转换器, 2位, X2SON-8
Pictures:
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符号图
焊盘图
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引脚图在P3Hot
典型应用电路图在P1P16
原理图在P1P13
封装尺寸在P20P22P23P30
焊盘布局在P31
标记信息在P20P21
封装信息在P19P20P21P22P23
技术参数、封装参数在P4
应用领域在P1
电气规格在P6
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TXS0102DQER数据手册
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TXS0102
SCES640F –JANUARY 2007–REVISED FEBRUARY 2016
TXS0102 2-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull
Applications
1
1 Features
1
• No Direction-Control Signal Needed
• Max Data Rates
– 24 Mbps (Push Pull)
– 2 Mbps (Open Drain)
• Available in the Texas Instruments NanoStar™
Package
• 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B
port (V
CCA
≤ V
CCB
)
• V
CC
Isolation Feature: If Either V
CC
Input Is at
GND, Both Ports Are in the High-Impedance State
• No Power-Supply Sequencing Required: Either
V
CCA
or V
CCB
Can Be Ramped First
• I
off
Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– A Port
– 2500-V Human-Body Model (A114-B)
– 250-V Machine Model (A115-A)
– 1500-V Charged-Device Model (C101)
– B Port
– 8-kV Human-Body Model (A114-B)
– 250-V Machine Model (A115-A)
– 1500-V Charged-Device Model (C101)
2 Applications
• I
2
C/SMBus
• UART
• GPIO
3 Description
This two-bit non-inverting translator is a bidirectional
voltage-level translator and can be used to establish
digital switching compatibility between mixed-voltage
systems. It uses two separate configurable power-
supply rails, with the A ports supporting operating
voltages from 1.65 V to 3.6 V while it tracks the V
CCA
supply, and the B ports supporting operating voltages
from 2.3 V to 5.5 V while it tracks the V
CCB
supply.
This allows the support of both lower and higher logic
signal levels while providing bidirectional translation
capabilities between any of the 1.8-V, 2.5-V, 3.3-V,
and 5-V voltage nodes.
When the output-enable (OE) input is low, all I/Os are
placed in the high-impedance state, which
significantly reduces the power-supply quiescent
current consumption.
To ensure the high-impedance state during power up
or power down, OE should be tied to GND through a
pulldown resistor; the minimum value of the resistor is
determined by the current-sourcing capability of the
driver.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TXS0102
SSOP (8) 2.95 mm x 2.80 mm
VSSOP (8) 2.30 mm x 2.00 mm
X2SON (8)
1.40 mm x 1.00 mm
1.80 mm x 1.20 mm
DSBGA (8) 1.90 mm x 0.90 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Typical Application Block Diagram for TXS010X
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