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1
2
3
5
4
EN
GND
IN+/IN-
VDD
OUT
UCC27518/19
Q1
IN
4.5 V to 18 V
C1
R1
EN V+
UCC27518
UCC27519
www.ti.com
SLUSB33 MAY 2012
Single Channel High-Speed, Low-Side Gate Driver
(Based On CMOS Input Threshold with 4-A Peak Source and 4-A Peak Sink)
Check for Samples: UCC27518 , UCC27519
1
FEATURES
APPLICATIONS
Low-Cost, Gate-Driver Device Offering Switch-Mode Power Supplies
Superior Replacement of NPN and PNP
DC-to-DC Converters
Discrete Solutions
Companion Gate Driver Devices for Digital
Pin-to-Pin Compatible With TI's TPS2828 and
Power Controllers
the TPS2829
Solar Power, Motor Control, UPS
4-A Peak Source and 4-A Peak Sink
Gate Driver for Emerging Wide Band-Gap
Symmetrical Drive
Power Devices (such as GaN)
Fast Propagation Delays (17-ns typical)
Fast Rise and Fall Times (8-ns and 7-ns DESCRIPTION
typical)
The UCC27518 and UCC27519 single-channel, high-
speed, low-side gate driver device is capable of
4.5-V to 18-V Single Supply Range
effectively driving MOSFET and IGBT power
Outputs Held Low During VDD UVLO (ensures
switches. Using a design that inherently minimizes
glitch free operation at power-up and power-
shoot-through current, UCC27518 and UCC27519
down)
are capable of sourcing and sinking high, peak-
CMOS Input Logic Threshold (function of
current pulses into capacitive loads offering rail-to-rail
drive capability and extremely small propagation
supply voltage with hysteresis)
delay typically 17 ns.
Hysteretic Logic Thresholds for High Noise
Immunity
The UCC27518 and UCC27519 provide 4-A source,
4-A sink (symmetrical drive) peak-drive current
EN Pin for Enable Function (allowed to be no
capability at VDD = 12 V.
connect)
The UCC27518 and UCC27519 are designed to
Output Held Low when Input Pins are Floating
operate over a wide VDD range of 4.5 V to 18 V and
Input Pin Absolute Maximum Voltage Levels
wide temperature range of -40°C to 140°C. Internal
Not Restricted by VDD Pin Bias Supply
Under Voltage Lockout (UVLO) circuitry on VDD pin
Voltage
holds output low outside VDD operating range. The
Operating Temperature Range of -40°C to
capability to operate at low voltage levels such as
140°C
below 5 V, along with best in class switching
characteristics, is especially suited for driving
5-Pin DBV Package (SOT-23)
emerging wide band-gap power switching devices
such as GaN power semiconductor devices.
Typical Application Diagrams
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

UCC27511DBV 数据手册

TI(德州仪器)
24 页 / 0.65 MByte

UCC27511 数据手册

TI(德州仪器)
4A/8A 单通道高速低侧闸极驱动器
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TEXAS INSTRUMENTS  UCC27511DBVR  驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 8A输出, -999ms 延迟, SOT-23-6
TI(德州仪器)
TEXAS INSTRUMENTS  UCC27511DBVT  芯片, MOSFET驱动器, 低压侧, 6-SOT-23
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具有 5V UVLO 和分离输出的汽车类 4A/8A 单通道栅极驱动器 6-SOT-23 -40 to 125
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UCC27511A-Q1 单通道高速低侧栅极驱动器
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单通道高速低侧栅极驱动器(具有4 -A峰值源和8 -A峰汇) Single-Channel High-Speed Low-Side Gate Driver (with 4-A Peak Source and 8-A Peak Sink)
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