Web Analytics
Datasheet 搜索 > 接口芯片 > ST Microelectronics(意法半导体) > ULN2004D 数据手册 > ULN2004D 数据手册 8/14 页
ULN2004D
1.533
导航目录
  • 引脚图在P4
  • 原理图在P3
  • 封装尺寸在P9P10P11
  • 技术参数、封装参数在P5
  • 应用领域在P14
  • 电气规格在P6
  • 型号编号列表在P12
ULN2004D数据手册
Page:
of 14 Go
若手册格式错乱,请下载阅览PDF原文件
Test circuits ULN200xA - ULN200xD1
8/14
Figure 9. Clamp diode leakage current Figure 10. Clamp diode forward voltage
Figure 11. Collector current vs input current Figure 12. Collector current vs saturation
voltage
Figure 13. Peak collector current vs duty cycle Figure 14. Peak collector current vs duty cycle
0 100 200 300 400 500 Ib(
μ
A)
0
100
200
300
400
500
Ic
(mA)
Tj=25˚C
D96IN453
TYPICAL
Max
0.0 0.5 1.0 1.5 Vce
(
sat
)
0
100
200
300
400
500
Ic
(mA)
Tj=25˚C
D96IN454
Max
TYPICAL
0 20406080DC
0
100
200
300
400
500
Ic peak
(mA)
Tamb=70˚C
(DIP16)
7 6 5 4 3 2
NUMBER OF ACTIVE OUTPUT
D96IN451
0 20 40 60 80 100 DC
0
100
200
300
400
500
Ic peak
(mA)
D96IN452A
7
5
3
2
NUMBER OF ACTIVE OUTPUT
Tamb=70˚C
(SO16)

ULN2004D 数据手册

ST Microelectronics(意法半导体)
14 页 / 0.59 MByte

ULN2004 数据手册

TI(德州仪器)
高压大电流达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY
TI(德州仪器)
TEXAS INSTRUMENTS  ULN2004ADR  晶体管阵列
ST Microelectronics(意法半导体)
STMICROELECTRONICS  ULN2004D1013TR  双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
ST Microelectronics(意法半导体)
STMICROELECTRONICS  ULN2004A  双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
TI(德州仪器)
TEXAS INSTRUMENTS  ULN2004AN  双极晶体管阵列, 达林顿, NPN, 50 V, 350 mA, DIP
TI(德州仪器)
Darlington Transistor Arrays, Texas InstrumentsThis array of seven Darlington transistor circuits is able to drive high output current.### 达林顿晶体管驱动器
TI(德州仪器)
TEXAS INSTRUMENTS  ULN2004AID  双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
TI(德州仪器)
高压大电流达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY
TI(德州仪器)
高压大电流达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY
TI(德州仪器)
高压大电流达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件