Datasheet 搜索 > FET驱动器 > ST Microelectronics（意法半导体） > VND05BSP 数据手册 > VND05BSP 数据手册 3/9 页
￥ 3.073
VND05BSP 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
FET驱动器
封装:
PowerSO-10
描述:
ISO高侧智能功率固态继电器 ISO HIGH SIDE SMART POWER SOLID STATE RELAY
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
VND05BSP数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max
2.1
50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS
(8 < V
CC
< 16 V; -40
≤
T
j
≤
125
o
C unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply Voltage 6 13 26 V
In(*) Nominal Current
T
c
= 85
o
C V
DS(on)
≤
0.5 V
CC
= 13 V
1.6 2.6 A
R
on
On State Resistance I
OUT
= I
n
V
CC
= 13 V T
j
= 25
o
C 0.13 0.2
Ω
I
S
Supply Current Off State T
j
= 25
o
C V
CC
= 13 V 35 100
µ
A
V
DS(MAX)
Maximum Voltage Drop I
OUT
= 7.5 A T
j
= 85
o
C V
CC
= 13 V 1.44 2.3 V
R
i
Output to GND internal
Impedance
T
j
= 25
o
C 5 10 20 K
Ω
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(^) Turn-on Delay Time Of
Output Current
R
out
= 5.4
Ω
5 25 200
µ
s
t
r
(^) Rise Time Of Output
Current
R
out
= 5.4
Ω
10 50 180
µ
s
t
d(off)
(^) Turn-off Delay Time Of
Output Current
R
out
= 5.4
Ω
10 75 250
µ
s
t
f
(^) Fall Time Of Output
Current
R
out
= 5.4
Ω
10 35 180
µ
s
(di/dt)
on
Turn-on Current Slope
R
out
= 5.4
Ω
0.003 0.1 A/
µ
s
(di/dt)
off
Turn-off Current Slope
R
out
= 5.4
Ω
0.005 0.1 A/
µ
s
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IL
Input Low Level
Voltage
1.5 V
V
IH
Input High Level
Voltage
3.5 (
•
)V
V
I(hyst.)
Input Hysteresis
Voltage
0.2 0.9 1.5 V
I
IN
Input Current V
IN
= 5 V T
j
= 25
o
C 30 100
µ
A
V
ICL
Input Clamp Voltage I
IN
= 10 mA
I
IN
= -10 mA
56
-0.7
7V
V
VND05BSP
3/9
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
