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ZXMP6A13FTA 数据手册 - Diodes（美台）
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Diodes（美台）
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MOS管
封装:
SOT-23-3
描述:
ZXMP6A13FTA 编带
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ZXMP6A13FTA数据手册
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ZXMP6A13F
Document Number DS32014 Rev. 6 - 2
4 of 8
www.diodes.com
September 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXMP6A13F
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60
⎯ ⎯
V
I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-0.5
μA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
-1.0
⎯
-3.0 V
I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10)
R
DS (ON)
⎯ ⎯
0.400
Ω
V
GS
= -10V, I
D
= -0.9A
0.600
V
GS
= -4.5V, I
D
= -0.8A
Forward Transconductance (Notes 10 and 12)
g
fs
⎯
1.8
⎯
S
V
DS
= -15V, I
D
= -0.9A
Diode Forward Voltage (Note 10)
V
SD
⎯
-0.85 -0.95 V
T
J
= 25°C, I
S
= -0.8A, V
GS
= 0V
Reverse Recovery Time (Note 12)
t
r
r
⎯
21.1
⎯
ns
T
J
= 25°C, I
F
= -0.9A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 12)
Q
r
r
⎯
19.3
⎯
nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯
219
⎯
pF
V
DS
= -30V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
25.7
⎯
Reverse Transfer Capacitance
C
rss
⎯
20.5
⎯
Turn-On Delay Time (Note 11)
t
D
(
on
)
⎯
1.6
⎯
ns
V
DD
= -30V, I
D
= -1A,
R
G
≅ 6.0Ω, V
GS
= -10V
Turn-On Rise Time (Note 11)
t
r
⎯
2.2
⎯
Turn-Off Delay Time (Note 11)
t
D
(
off
)
⎯
11.2
⎯
Turn-Off Fall Time (Note 11)
t
f
⎯
5.7
⎯
Total Gate Charge (Note 11)
Q
g
⎯
2.9
⎯
nC
V
DS
= -30V, V
GS
= -4.5V,
I
D
= -0.9A
Total Gate Charge (Note 11)
Q
g
⎯
5.9
⎯
nC
V
DS
= -30V, V
GS
= -10V,
I
D
= -0.9A
Gate-Source Charge (Note 11)
Q
g
s
⎯
0.74
⎯
Gate-Drain Charge (Note 11)
Q
g
d
⎯
1.5
⎯
Notes: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
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