Datasheet 搜索 > 陶瓷电容 > AVX（艾维克斯） > 04023A101JAT2A 数据手册 > 04023A101JAT2A 其他数据使用手册 2/4 页
器件3D模型￥ 0.247
04023A101JAT2A 其他数据使用手册 - AVX（艾维克斯）
制造商:
AVX（艾维克斯）
分类:
陶瓷电容
封装:
0402
描述:
AVX 04023A101JAT2A 多层陶瓷电容器, 表面贴装, 100 pF, ± 5%, C0G / NP0, 25 V, 0402 [1005 公制]
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04023A101JAT2A数据手册
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The Important Information/Disclaimer is incorporated in the catalog where these specications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
4
C0G (NP0) Dielectric
Specications and Test Methods
Parameter/Test NP0 Specication Limits Measuring Conditions
Operating Temperature Range -55ºC to +125ºC Temperature Cycle Chamber
Capacitance Within specied tolerance
<30 pF: Q≥ 400+20 x Cap Value
≥30 pF: Q≥ 1000
Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF
1.0 kHz ± 10% for cap > 1000 pF
Voltage: 1.0Vrms ± .2V
Q
Insulation Resistance
100,000MΩ or 1000MΩ - µF,
whichever is less
Charge device with rated voltage for 60 ± 5 secs
@ room temp/humidity
Dielectric Strength No breakdown or visual defects
Charge device with 250% of rated voltage for 1-5
seconds, w/charge and discharge current limited
to 50 mA (max)
Note: Charge device with 150% of rated voltage
for 500V devices.
Resistance to
Flexure
Stresses
Appearance No defects
Deection: 2mm
Test Time: 30 seconds
Capacitance
Variation
±5% or ±.5 pF, whichever is greater
Q Meets Initial Values (As Above)
Insulation
Resistance
≥ Initial Value x 0.3
Solderability
≥ 95% of each terminal should be covered
with fresh solder
Dip device in eutectic solder at 230 ± 5ºC for 5.0 ±
0.5 seconds
Resistance to
Solder Heat
Appearance No defects, <25% leaching of either end terminal
Dip device in eutectic solder at 260ºC for
60sec- onds. Store at room temperature
for 24 ± 2hours before measuring electrical
properties.
Capacitance
Variation
≤ ±2.5% or ±.25 pF, whichever is greater
Q Meets Initial Values (As Above)
Insulation
Resistance
Meets Initial Values (As Above)
Dielectric
Strength
Meets Initial Values (As Above)
Thermal Shock
Appearance No visual defects Step 1: -55ºC ± 2º 30 ± 3 minutes
Capacitance
Variation
≤ ±2.5% or ±.25 pF, whichever is greater Step 2: Room Temp ≤ 3 minutes
Q Meets Initial Values (As Above) Step 3: +125ºC ± 2º 30 ± 3 minutes
Insulation
Resistance
Meets Initial Values (As Above) Step 4: Room Temp ≤ 3 minutes
Dielectric
Strength
Meets Initial Values (As Above)
Repeat for 5 cycles and measure after
24 hours at room temperature
Load Life
Appearance No visual defects
Charge device with twice rated voltage in test
chamber set at 125ºC ± 2ºC
for 1000 hours (+48, -0).
Remove from test chamber and stabilize at
room temperature for 24 hours
before measuring.
Capacitance
Variation
≤ ±3.0% or ± .3 pF, whichever is greater
Q
(C=Nominal Cap)
≥ 30 pF: Q≥ 350
≥10 pF, <30 pF: Q≥ 275 +5C/2
<10 pF: Q≥ 200 +10C
Insulation
Resistance
≥ Initial Value x 0.3 (See Above)
Dielectric
Strength
Meets Initial Values (As Above)
Load
Humidity
Appearance No visual defects
Store in a test chamber set at 85ºC ± 2ºC/ 85% ±
5% relative humidity for 1000 hours
(+48, -0) with rated voltage applied.
Remove from chamber and stabilize at room
temperature for 24 ± 2 hours before measuring.
Capacitance
Variation
≤ ±5.0% or ± .5 pF, whichever is greater
Q
≥ 30 pF: Q≥ 350
≥10 pF, <30 pF: Q≥ 275 +5C/2
<10 pF: Q≥ 200 +10C
Insulation
Resistance ≥ Initial Value x 0.3 (See Above)
Dielectric
Strength
Meets Initial Values (As Above)
051818
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