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1N4448 其他数据使用手册 - DC Components
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1N4448数据手册
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Dimensions in inches and (millimeters)
1N4148 1N4150 1N4151 1N4448 UNITS
100 50 75 100 V
150 200 150 150 mA
500 500 500 500 mW
1.0/10 1.0/200 1.0/50 1.0/100 V/mA
5000/75 100/50 50/50 5000/75 nA/V
4.0 4.0 2.0 4.0 nS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RECTIFIER SPECIALISTS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS
OF
HIGH SPEED SWITCHING DIODES
VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.15 to 0.2 Ampere
FEATURES
* Silicon epitaxial planar diodes
* Low leakage
* Low forward voltage
* High speed switching
* High current capability
* High reliability
MECHANICAL DATA
* Case: Glass sealed case
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.13 gram
* Low power loss, high efficiency
DO-34 / DO-35
L
NOTE: Suffix "M" stands for "DO-34" package.(e.g.:1N4148M)
1N4148
THRU
1N4448
L
DO-34 DO-35
.1
14(2.9) .165(4.2)
MAX. MAX.
.020(0.5) .020(0.50)
.012(0.3) TYP.
W
W
TJ,TSTG
Maximum Recurrent Peak Reverse Voltage
Maximum Average Rectified Current
VRRM
SYMBOL
IO
Maximum Power Dissipation Tamb = 25
o
C
Maximum Forward Voltage
Maximum Reverse Current
Maximum Reverse Recovery Time
Typical thermal Resistance
Operating and Storage Temperature Range
Ptot
VF/@IF
IR/@VR
trr
CJ 4.0
-65 to +150
o
C
pF
Peak Forward Surge Current, t < 1s and TJ = 25
o
C
Typical Junction Capacitance
IFSM
RθJA
A0.5
300
o
C / W
1.0(25.4)
MIN.
1.0(25.4)
MIN.
.079
(2.0)
MAX.
REV-1,Apr/25/2013
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