Web Analytics
Datasheet 搜索 > ON Semiconductor(安森美) > 1N5231C 数据手册 > 1N5231C 产品描述及参数 2/4 页
1N5231C
器件3D模型
0.087
导航目录
  • 标记信息在P3
  • 电气规格在P1P3
1N5231C数据手册
Page:
of 4 Go
若手册格式错乱,请下载阅览PDF原文件
High-reliability discrete products
and engineering services since 1977
1N5221B(UR)-1N5281B(UR)
SILICON ZENER DIODES
Rev. 20190114
Part Number
(1)
Nominal
Zener Voltage
V
Z
@ I
ZT
Volts
Test
Current
I
ZT
mA
Max Reverse Leakage Current
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
α
VZ
(%/°C)
(3)
A, B, & D Suffix
Only
Non Suffix
Z
ZT
@ I
ZT
Ohms
Z
ZT
@ I
ZK
=0.25mA
Ohms
I
R
V
R
µA @ Volts
I
R
@ V
R
Used For
Suffix A
µA
A
B,C&D
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
47
51
56
60
62
2.7
2.5
2.2
2.1
2.0
105
125
150
170
185
1000
1100
1300
1400
1400
0.1
0.1
0.1
0.1
0.1
34
37
41
44
45
36
39
43
46
47
10
10
10
10
10
+0.095
+0.096
+0.096
+0.097
+0.097
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
68
75
82
87
91
1.8
1.7
1.5
1.4
1.4
230
270
330
370
400
1600
1700
2000
2200
2300
0.1
0.1
0.1
0.1
0.1
49
53
59
65
66
52
56
62
68
69
10
10
10
10
10
+0.097
+0.098
+0.098
+0.099
+0.099
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
100
110
120
130
140
1.3
1.1
1.0
0.95
0.90
500
750
900
1100
1300
2600
3000
4000
4500
4500
0.1
0.1
0.1
0.1
0.1
72
80
86
94
101
76
84
91
99
106
10
10
10
10
10
+0.110
+0.110
+0.110
+0.110
+0.110
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B
150
160
170
180
190
200
0.85
0.80
0.74
0.68
0.66
0.65
150
170
190
2200
2400
2500
5000
5500
5500
6000
6500
7000
0.1
0.1
0.1
0.1
0.1
0.1
108
116
123
130
137
144
114
122
129
137
144
152
10
10
10
10
10
10
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” minimum lead length from the case.
NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current
(I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units.
NOTE 3: Temperature coefficient (α
VZ
). Test conditions for temperature coefficient are a follows:
a. I
ZT
= 7.5 mA, T
1
= 25°C,
T
2
= 125°C (1N5221A, thru 1N5242A, B.)
b. I
ZT
= Rated I
ZT
, T
1
= 25°C,
T
2
= 125°C (1N5243A, B thru 1N5281A, B.)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.

1N5231C 数据手册

ON Semiconductor(安森美)
6 页 / 0.62 MByte
ON Semiconductor(安森美)
7 页 / 0.3 MByte
ON Semiconductor(安森美)
2 页 / 0.02 MByte
ON Semiconductor(安森美)
4 页 / 0.58 MByte

1N5231 数据手册

Vishay Semiconductor(威世)
齐纳二极管 ZENER DIODES
Micro Commercial Components(美微科)
Surge Components
Motorola(摩托罗拉)
ROHM Semiconductor(罗姆半导体)
Sensitron Semiconductor
Fairchild(飞兆/仙童)
Comchip Technology(上华科技)
Diodes(美台)
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件