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1N5357BE3/TR8 产品手册 - Microsemi（美高森美）
制造商:
Microsemi（美高森美）
分类:
齐纳二极管
封装:
T-18-2
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1N5357BE3/TR8数据手册
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DS21407 Rev. D-3 1 of 3 1N5344B-1N5388B
·
Voltage Range 8.2V - 200V
·
Glass Passivated Junction
·
5W Steady State
·
High Surge Capability
·
±5% Voltage Tolerance on Nominal
V
Z
is Standard
·
100% Tested
1N5344B - 1N5388B
5W ZENER DIODE
Notes: 1. Nominal Zener Voltage (V
Z
) is read with the device in standard test clips with 3/8- to 1/2-inch spacing between clip and case
of the diode. Before reading, the diode is allowed to stabilize for a period of 40 ±10 milliseconds at 25°C +8, -2°C.
2. The Zener Impedance (Z
Z
or Z
ZK
) is derived from the 60 Hz ac voltage, which results when an ac current having an rms
value equal to 10% of the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK,
respectively.
3. The Surge Current (I
ZSM
) is specified as the maximum peak of a nonrecurrent sine wave of 8.3 milliseconds duration.
4. Voltage regulation (DV
Z
) is the difference between the voltage measured at 10% and 50% of I
ZM
.
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol Value Unit
DC Power Dissipation @ T
L
= 75°C 9.5mm from
Body (Board Mounted)
P
d
5.0 W
Power Derating Above 75°C Lead Temperature
—20°C/W
Operating and Storage Temperature Range
T
j
,T
STG
-55 to +175 °C
Features
Mechanical Data
·
Case: Molded Plastic Over Glass Passivated
Junction
·
Leads: Solderable per MIL-STD-202,
Method 208
·
Polarity: Cathode Band
·
Approx. Weight: 1.2 grams
5W
Dim Min Max
A
25.40 —
B
8.38 8.89
C
0.94 1.09
D
3.30 3.68
All Dimensions in mm
A
A
B
C
D
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