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1N5408 其他数据使用手册 - NTE Electronics
制造商:
NTE Electronics
分类:
功率二极管
封装:
DO-27
描述:
NTE ELECTRONICS 1N5408 整流二极管, 标准恢复型
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1N5408数据手册
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1I5400 thru 1N5408
Axial Lead Standard Recovery
Silicon Rectifiers, 3 Amp, DO−201AD
Features:
D 3 Amp Operation at T
A
= +75°C with no Thermal Runaway
D High Current Capability
D Low Leakage
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified, Note 1)
Peak Repetitive Reverse Voltage, V
RRM
DC Reverse Voltage, V
R
1N5400 50V.....................................................................
1N5401 100V....................................................................
1N5402 200V....................................................................
1N5403 300V....................................................................
1N5404 400V....................................................................
1N5405 500V....................................................................
1N5406 600V....................................................................
1N5407 800V....................................................................
1N5408 1000V...................................................................
Maximum RMS Voltage
1N5400 35V.....................................................................
1N5401 70V.....................................................................
1N5402 140V....................................................................
1N5403 210V....................................................................
1N5404 280V....................................................................
1N5405 350V....................................................................
1N5406 420V....................................................................
1N5407 560V....................................................................
1N5408 700V....................................................................
Average Rectified Current (.375” Lead Length, T
A
= +75°C), I
O
3A............................
Peak Forward Surge Current, I
F(surge)
(Superimposed on a Rated Load, 8.3ms Single Half−Sine Wave) 200A..................
Total Device Dissipation, P
D
6.25W.......................................................
Derate Above +25°C 50mW/°C.....................................................
Operating Junction Temperature Range, T
J
−55° to +150°C..................................
Storage Temperature Range, T
stg
−55° to +150°C..........................................
Thermal Resistance, Junction−to−Ambient, R
thJA
+20°C/W..................................
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired.
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