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2SC2712
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2SC2712数据手册
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Production specification
Silicon Epitaxial Planar Transistor 2SC2712
C021
www.gmesemi.com
Rev.A 1
FEATURES
Low noiseNF=1dB (Typ.),10 dB(Max)
Complementary to 2SA1162
High voltage and high current
Excellent h
FE
linearity
APPLICATIONS
Audio frequency general purpose amplifier applications SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SC2712 LO/LY/LG/LL SOT-23
MAXIMUM RATING @ Ta=25 unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
60 V
V
CEO
Collector-Emitter Voltage
50 V
V
EBO
Emitter-Base Voltage
5 V
I
C
Collector Current -Continuous
150 mA
I
B
Base current
30 mA
P
C
Collector Dissipation
150 mW
T
j,
T
stg
Junction and Storage Temperature
-55 to +125
Pb
Lead-free

2SC2712 数据手册

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