Datasheet 搜索 > ROHM Semiconductor（罗姆半导体） > 2SC4081UB 数据手册 > 2SC4081UB 其他数据使用手册 1/4 页
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2SC4081UB 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
封装:
SOT-323
描述:
2SC4081UB NPN三极管 60V 150mA/0.15A 180MHz 120~270 400mV/0.4V SOT-323/SC-70/UMT3 marking/标记 BQ
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
2SC4081UB数据手册
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of 4 Go
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2SC4081UB
Transistors
1/3
General purpose small signal amplifier
(50V, 0.15A)
2SC4081UB
zApplications
General purpose small signal amplifier
zFeatures
1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA4081.
zStructure
NPN silicon epitaxial planar transistor
zDimensions (Unit : mm)
UMT3F
Each lead has same dimensions
2.0
0.32
0.65 0.65
1.3
2.1
1.25
0.4250.425
(1) (2)
(3)
0.9
0.530.53
0.13
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : B
zAbsolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
V
CBO
VCEO
VEBO
PD
ICP
Tj
Tstg
60 V
V
V
mA
mW
mA
∗1
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
∗2
°C
°C
50
7
150I
C
200
200
150
−55 to +150
Symbol Limits Unit
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
82
−
−
−
−
−
−
−
−
−
−
180
2.0
−
−
−
100
100
560
400
−
3.5
VI
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CB
=12V, I
E
=0A, f=1MHz
V
V
nA
nA
−
mV
MHz
pF
Typ. Max. Unit Conditions
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