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7MBR50U2A-060 其他数据使用手册 - FUJI（富士电机）
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7MBR50U2A-060数据手册
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IGBT Module
7MBR50U2A060
Characteristics (Representative)
Vcc=300V, Ic=50A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
[ Inverter ] [ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ] [ Inverter ]
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
20
40
60
80
100
120
012345
Collector current : Ic [ A ]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
20
40
60
80
100
120
012345
C
o
ll
ec
t
or curren
t
:
I
c
[
A
]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
20
40
60
80
100
120
01234
Collector current : Ic [ A ]
Collector-Emitter voltage : VCE [V]
Tj=125°CTj=25°C
0
2
4
6
8
10
5 10152025
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic=50A
Ic=25A
0.01
0.10
1.00
10.00
0102030
Capacitanse : Cies, Coes, Cres [ nF
]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
400
500
0 50 100 150 200 250
0
5
10
15
20
25
Collector-Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
0
VGE
VCE
Gate - Emitter volta
g
e : VGE
[
V
]
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