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AD7894ARZ-3REEL7 其他数据使用手册 - ADI（亚德诺）
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ADI（亚德诺）
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AD转换器
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SOIC-8
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AD7894ARZ-3REEL7数据手册
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ADR01/ADR02/ADR03/ADR06
Rev. F | Page 5 of 20
ADR03 ELECTRICAL CHARACTERISTICS
V
IN
= 4.5 V to 40 V, T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage V
O
A and C grades 2.495 2.500 2.505 V
5 mV Initial Accuracy V
OERR
A and C grades
0.2 %
Output Voltage V
O
B grades 2.4975 2.5000 2.5025 V
2.5 mV Initial Accuracy V
OERR
B grades
0.1 %
A grade, SOIC-8, –40°C < T
A
< +125°C 3 10 ppm/°C
A grade, TSOT-5, –40°C < T
A
< +125°C 25 ppm/°C
A grade, SC70-5, –40°C < T
A
< +125°C
A grade, SC70-5, –55°C < T
A
< +125°C
25
30
ppm/°C
ppm/°C
B grade, SOIC-8, –40°C < T
A
< +125°C 1 3 ppm/°C
B grade, TSOT-5, –40°C < T
A
< +125°C 9 ppm/°C
Temperature Coefficient TCV
O
B grade, SC70-5, –40°C < T
A
< +125°C 9 ppm/°C
C grade, SOIC-8, –40°C < T
A
< +125°C 10 40 ppm/°C
Supply Voltage Headroom V
IN
– V
O
2 V
Line Regulation ∆V
O
/∆V
IN
V
IN
= 7.5 V to 40 V, –40°C < T
A
< +125°C
V
IN
= 7.5 V to 40 V, –55°C < T
A
< +125°C
7
7
30
40
ppm/V
ppm/V
Load Regulation ∆V
O
/∆I
LOAD
I
LOAD
= 0 mA to 10 mA, –40°C < T
A
< +125°C,
V
IN
= 7.0 V
I
LOAD
= 0 mA to 10 mA, –55°C < T
A
< +125°C,
V
IN
= 7.0 V
25
45
70
80
ppm/mA
ppm/mA
Quiescent Current I
IN
No load, –40°C < T
A
< +125°C 0.65 1 mA
Voltage Noise e
N p-p
0.1 Hz to 10 Hz 6 µV p-p
Voltage Noise Density e
N
1 kHz 230 nV/√Hz
Turn-On Settling Time t
R
4 µs
Long-Term Stability
1
∆V
O
1,000 hours 50 ppm
Output Voltage Hysteresis ∆V
O_HYS
–55°C < T
A
< +125°C
70
80
ppm
ppm
Ripple Rejection Ratio RRR f
IN
= 10 kHz –75 dB
Short Circuit to GND I
SC
30 mA
Voltage Output at TEMP Pin V
TEMP
550 mV
Temperature Sensitivity TCV
TEMP
1.96 mV/°C
1
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
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