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AM29F200AB-90SI
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  • 引脚图在P6
  • 原理图在P3
  • 封装尺寸在P36P37P38
  • 型号编码规则在P7
  • 功能描述在P2
  • 技术参数、封装参数在P21P24
AM29F200AB-90SI数据手册
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PRELIMINARY
Publication# 20637 Rev: B Amendment/+4
Issue Date: January 3, 2000
Am29F200A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
5.0 V
±
10% for read and write operations
Minimizes system level power requirements
High performance
Access times as fast as 55 ns
Low power consumption
20 mA typical active read current (byte mode)
28 mA typical active read current for
(word mode)
30 mA typical program/erase current
—1
µ
A typical standby current
Sector erase architecture
One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
Supports full chip erase
Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Top or bottom boot block configurations
available
Embedded Algorithms
Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 100,000 write/erase cycles guaranteed
Package options
44-pin SO
48-pin TSOP
Compatible with JEDEC standards
Pinout and software compatible with
single-power-supply flash
Superior inadvertent write protection
Data# Polling and Toggle Bit
Detects program or erase cycle completion
Ready/Busy# output (RY/BY#)
Hardware method for detection of program or
erase cycle completion
Erase Suspend/Erase Resume
Supports reading data from a sector not being
erased
Hardware RESET# pin
Resets internal state machine to the reading
array data

AM29F200AB-90SI 数据手册

Cypress Semiconductor(赛普拉斯)
39 页 / 0.45 MByte

AM29F200AB90 数据手册

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