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器件3D模型￥ 0.363
AO4407 其他数据使用手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
SOIC-8
描述:
二极管与整流器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
功能描述在P1
技术参数、封装参数在P1
应用领域在P2
电气规格在P2
导航目录
AO4407数据手册
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AO4407
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
-1.7 -2.25 -2.8 V
I
D(ON)
-60 A
8.5 13 mΩ
10 14
T
J
=125°C 12 19
19 30 mΩ
g
FS
27 S
V
SD
-0.72 -1 V
I
S
-4 A
C
iss
2060 2600 pF
C
oss
370 pF
C
rss
295 pF
R
g
1.2 2.4 3.6 Ω
Q
g
24 30 36 nC
Q
gs
4.6 nC
Q
gd
10 nC
t
D(on)
11 ns
t
9.4
ns
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-12A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-10.5A
V
GS
=-5V, I
D
=-7A
Turn-On Rise Time
Forward Transconductance
Diode Forward Voltage
V
GS
=-20V, I
D
=-12A
V
=
-
10V, V
=
-
15V,
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-12A
Gate Source Charge
Gate Drain Charge
R
DS(ON)
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
t
r
9.4
ns
t
D(off)
24 ns
t
f
12 ns
t
rr
30 40 ns
Q
rr
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=-12A, dI/dt=100A/µs
Turn-On Rise Time
V
GS
=
-
10V, V
DS
=
-
15V,
R
L
=1.25Ω, R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Charge
I
F
=-12A, dI/dt=100A/µs
Turn-Off DelayTime
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Rev.14.0: July 2013 www.aosmd.com Page 2 of 5
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