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AOTF22N50 其他数据使用手册 - Alpha & Omega Semiconductor(万代半导体)
制造商:
Alpha & Omega Semiconductor(万代半导体)
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
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AOTF22N50数据手册
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AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 22A
R
DS(ON)
(at V
GS
=10V) < 0.26Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT22N50L&AOTF22N50L
The AOT22N50 & AOTF22N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
600V@150℃
Form Minimum Order QuantityOrderable Part Number Package Type
AOT22N50L TO220 Green Tube 1000
G
D
S
Top View
TO
-
220F
TO
-
220
G
D
S
G
D
S
AOT22N50
AOTF22N50
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
2.5
417 50
3.3 0.4
AOT22N50 AOTF22N50
0.5 --
65 65
0.3 °C/W
Units
A
°C
mJ
W
W/
o
C
°C/W
°C/W
°C
Thermal Characteristics
Parameter
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Junction and Storage Temperature Range
Derate above 25
o
C
Maximum Junction-to-Ambient
A,D
VGate-Source Voltage
V/ns
mJRepetitive avalanche energy
C
T
C
=100°C
A
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C
I
D
22 22*
15 15*
5
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Drain-Source Voltage
AOT22N50 AOTF22N50 AOTF22N50L
TO-220F Green
AOTF22N50 TO-220F Pb Free
Maximum Junction-to-Case
Avalanche Current
C
Single plused avalanche energy
G
Power Dissipation
B
P
D
T
C
=25°C
Maximum Case-to-sink
A
39
0.3
-55 to 150
300
65
--
3.2
AOTF22N50L
22*
15*
500
±30
88
7
735
1470
AOTF22N50L Tube 1000
Tube 1000
Rev.2.0: October 2014
www.aosmd.com
Page 1 of 6
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