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ARF1510 其他数据使用手册 - Microsemi（美高森美）
制造商:
Microsemi（美高森美）
分类:
晶体管
封装:
T-1
描述:
RF功率MOSFET全桥 RF POWER MOSFET FULL-BRIDGE
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ARF1510数据手册
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若手册格式错乱，请下载阅览PDF原文件
050-4926 Rev F 10-2008
D1
S1D2
G1
G2
S2
D3
G3
S3D4
G4
S4
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 μA)
On State Drain Voltage
1
(I
D
(ON)
= 3.25A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3.25A)
RMS Voltage
(60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN TYP MAX
1000
6.8 7.5
25
250
±100
3 4
TBD
3 5
UNIT
Volts
μA
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF 1510
1000
8
±30
1500
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
FULL-BRIDGE 400V 750W 40MHz
The ARF1510 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V
operation in high power scientifi c, medical and, industrial RF power generator and amplifi er applications up to 40
MHz.
• Specifi ed 300 Volt, 27.12 MHz Characteristics:
• Output Power = 750 Watts.
• Gain = 17dB (Class D)
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
• RoHS Compliant
ARF1510
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJHS
Characteristic (per package unless otherwise noted)
Junction to Case
Junction to Sink
(Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.10
0.16
UNIT
°C/W
Volts
ARF1510
D1
S1D2
G1
G2
S2
D3
G3
S3D4
G4
S4
Microsemi Website - http://www.microsemi.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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