Web Analytics
Datasheet 搜索 > 肖特基二极管 > ON Semiconductor(安森美) > BAS70-04LT1 数据手册 > BAS70-04LT1 其他数据使用手册 2/5 页
BAS70-04LT1
0.563
导航目录
  • 封装尺寸在P4
  • 焊盘布局在P4
  • 型号编码规则在P1
  • 标记信息在P1
  • 封装信息在P1
  • 功能描述在P1
  • 应用领域在P1
  • 电气规格在P2
BAS70-04LT1数据手册
Page:
of 5 Go
若手册格式错乱,请下载阅览PDF原文件
BAS70WQ /-04Q /-05Q /-06Q
Document number: DS38384 Rev. 1 - 2
2 of 5
www.diodes.com
May 2016
© Diodes Incorporated
BAS70WQ /-04Q /-05Q /-06Q
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage
V
R(RMS)
49
V
Forward Continuous Current (Note 6)
I
O
70
mA
Non-Repetitive Peak Forward Surge Current @ t
p
< 1.0s
I
FSM
100
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
P
D
200
mW
Thermal Resistance Junction to Ambient Air (Note 6)
R
θ
JA
625
°C/W
Operating Temperature Range
T
J
-55 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 7)
V
(BR)R
70
I
R
= 10
µ
A
Forward Voltage
V
F
410
1000
mV
t
p
< 300µs, I
F
= 1.0mA
t
p
< 300µs, I
F
= 15mA
Reverse Current (Note 7)
I
R
100
nA
t
p
< 300µs, V
R
= 50V
Total Capacitance
C
T
2.0
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
RR
5.0 ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporateds package outline PDFs, which can be
found on our website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
0.1
1
10
100
1,000
10,000
0
2010 30 605040
70
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
R
I , INSTANTANEOUS REVERSE CURRENT (nA)
R
0.1
0
1.0
10
0.4
0.6
0.2
0.8
1.2
1.0
1.4
1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
F
I
,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
F
100
T = 125ºC
A
T = -40ºC
A
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)

BAS70-04LT1 数据手册

ON Semiconductor(安森美)
5 页 / 0.04 MByte
ON Semiconductor(安森美)
5 页 / 0.18 MByte
ON Semiconductor(安森美)
2 页 / 0.03 MByte
ON Semiconductor(安森美)
3 页 / 0.11 MByte

BAS7004 数据手册

CJ(长电科技)
BAS70-04 编带
NXP(恩智浦)
NXP  BAS70-04  小信号肖特基二极管, 双系列, 70 V, 70 mA, 700 mV, 100 mA, 125 °C
Infineon(英飞凌)
BAS70-04 串联肖特基二极管 70V 70mA 1V SOT-23/SC-59 marking/标记 74 高速开关 高击穿电压
Diotec Semiconductor
SLKOR(韩国萨科微)
Nexperia(安世)
肖特基势垒二极管,高达 120mA,Nexperia高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
Taiwan Semiconductor(台湾半导体)
1A,Taiwan Semiconductor低功率损耗 低正向压降 高电流容量 ### 二极管和整流器,Taiwan Semiconductor
Vishay Semiconductor(威世)
表面贴装肖特基势垒二极管 Surface Mount Schottky Barrier Diodes
Good-Ark Electronics(固锝)
ST Microelectronics(意法半导体)
小信号肖特基二极管 SMALL SIGNAL SCHOTTKY DIODES
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件