Datasheet 搜索 > 肖特基二极管 > Infineon（英飞凌） > BAT165 数据手册 > BAT165 产品手册 1/6 页
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BAT165 产品手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
肖特基二极管
封装:
SOD-323
描述:
Infineon### 二极管和整流器，Infineon
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3D模型
符号图
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标记信息在P1P5
电气规格在P2
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BAT165数据手册
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of 6 Go
若手册格式错乱，请下载阅览PDF原文件
2007-04-19
1
BAT165...
Medium Power AF Schottky Diode
• Forward current: 750 mA
Reverse voltage: 40 V
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAT165
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT165 SOD323 single C/White
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage
2)
V
R
40 V
Forward current
2)
I
F
750 mA
Average rectified forward current (50/60Hz, sinus) I
FAV
500 mA
Non-repetitive peak surge forward current
(t ≤ 10ms)
I
FSM
2.5 A
Total power dissipation
T
S
≤ 93°C
P
tot
600 mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
≤ 95
K/W
1
Pb-containing package may be available upon special request
2
For T
A
> 25°C the derating of V
R
and I
F
has to be considered. Please refer to the atteched curves.
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance
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