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BAW56 其他数据使用手册 - 先科ST（先科）
制造商:
先科ST（先科）
封装:
SOT-23-3
描述:
BAW56 编带
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
标记信息在P1
技术参数、封装参数在P2P3
电气规格在P2
导航目录
BAW56数据手册
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BAW56
BAW56, Rev. C
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
BAW56
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage 85 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
T
stg
Storage Temperature Range -55 to +150
°
C
T
J
Operating Junction Temperature 150
°
C
Symbol
Parameter
Value
Units
P
D
Power Dissipation 350 mW
R
θ
JA
Thermal Resistance, Junction to Ambient 357
°
C/W
1
2
3
A1
12
3
Connection Diagram
3
1
2
SOT-23
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R
= 5.0
µ
A
85
V
V
F
Forward Voltage I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
715
855
1.0
1.25
mV
mV
V
V
I
R
Reverse Current
V
R
= 70 V
V
R
= 25 V, T
A
= 150
°
C
V
R
= 70 V, T
A
= 150
°
C
2.5
30
50
µ
A
µ
A
µ
A
C
T
Total Capacitance
V
R
= 0, f = 1.0 MHz
2.0 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
6.0 ns
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