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CMZB27
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CMZB27数据手册
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CMZB12~CMZB53
2008-10-30
1
TOSHIBA Zener Diode Silicon Diffused Type
CMZB12~CMZB53
Communication, Control and
Measurement Equipment
Constant Voltage Regulation
Transient Suppressors
Average power dissipation: P = 1.0 W
Zener voltage: V
Z
= 12 to 53 V
Suitable for high-density board assembly due to the use of a small
surface-mount package, MFLAT
TM
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Power dissipation P
1.0 (Note 1) W
Junction temperature T
j
40 to 150 °C
Storage temperature range T
stg
40 to 150 °C
Note 1: Ta = 40°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
Soldering size: 6 mm × 6 mm
Board thickness: 1.6 mm
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current /
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
ANODE
CATHODE
0.16
0.65 ± 0.2
0.65 ± 0.2
4.7 ± 0.2
3.8 ± 0.1
0 ~ 0.1
0.98 ± 0.1
1.75 ± 0.1
+ 0.2
0.1 2.4
JEDEC
JEITA
TOSHIBA 3-4E1A
Weight: 0.023 g (typ.)

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