Datasheet 搜索 > MOS管 > TI（德州仪器） > CSD19532Q5B 数据手册 > CSD19532Q5B 其他数据使用手册 1/13 页
￥ 3.843
CSD19532Q5B 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSON-Clip-8
描述:
N 通道 NexFET 功率 MOSFET，CSD19532Q5B
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
CSD19532Q5B数据手册
Page:
of 13 Go
若手册格式错乱，请下载阅览PDF原文件
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
V
GS
- Gate-to- Source Voltage (V)
R
DS(on)
- On-State Resistance (mΩ)
T
C
= 25°C, I
D
= 17A
T
C
= 125°C, I
D
= 17A
G001
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 17A
V
DS
= 50V
G001
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
P0093-01
Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD19532Q5B
SLPS414B –DECEMBER 2013–REVISED MAY 2017
CSD19532Q5B 100 V N-Channel NexFET™ Power MOSFET
1
1 Features
1
• Low Q
g
and Q
gd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• Synchronous Rectifier for Offline and Isolated DC-
DC Converters
• Motor Control
3 Description
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
Product Summary
T
A
= 25°C TYPICAL VALUE UNIT
V
DS
Drain-to-Source Voltage 100 V
Q
g
Gate Charge Total (10 V) 48 nC
Q
gd
Gate Charge Gate to Drain 8.7 nC
R
DS(on)
Drain-to-Source On Resistance
V
GS
= 6 V 4.6 mΩ
V
GS
= 10 V 4 mΩ
V
GS(th)
Threshold Voltage 2.6 V
.
Ordering Information
(1)
Device Media Qty Package Ship
CSD19532Q5B 13-Inch Reel 2500
SON 5 x 6 mm
Plastic Package
Tape and
Reel
CSD19532Q5BT 13-Inch Reel 250
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T
A
= 25°C VALUE UNIT
V
DS
Drain-to-Source Voltage 100 V
V
GS
Gate-to-Source Voltage ±20 V
I
D
Continuous Drain Current (Package limited) 100
A
Continuous Drain Current (Silicon limited),
T
C
= 25°C
140
Continuous Drain Current
(1)
17
I
DM
Pulsed Drain Current
(2)
400 A
P
D
Power Dissipation
(1)
3.1
W
Power Dissipation, T
C
= 25°C 195
T
J
,
T
stg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
E
AS
Avalanche Energy, single pulse
I
D
= 74 A, L = 0.1 mH, R
G
= 25 Ω
274 mJ
(1) Typical R
θJA
= 40°C/W on a 1-inch
2
, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max R
θJC
= 0.8°C/W, Pulse duration ≤100 µs, duty cycle ≤1%
R
DS(on)
vs V
GS
Gate Charge
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
