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EL817(B)
器件3D模型
1.517
导航目录
  • 引脚图在P1
  • 原理图在P1
  • 封装尺寸在P7
  • 焊盘布局在P9
  • 型号编码规则在P6
  • 标记信息在P10
  • 封装信息在P6P11P12
  • 焊接温度在P13
  • 技术参数、封装参数在P2P11P12
  • 应用领域在P1
  • 电气规格在P3P4
EL817(B)数据手册
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Copyright © 2010, Everlight All Rights Reserved. Release Date :May 26, 2014. Issue No: DPC-0000046 Rev.14
www.everlight.com
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 Series
Features:
Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
High isolation voltage between input
and output (Viso=5000 V rms )
Creepage distance >7.62 mm
Operating temperature up to +110°C
Compact small outline package
Pb free and RoHS compliant
UL and cUL approved(No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
Description
The EL817series of devices each consist of an infrared emitting diodes,
optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
Schematic
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector

EL817(B) 数据手册

Everlight Electronics(亿光)
14 页 / 0.69 MByte
Everlight Electronics(亿光)
14 页 / 0.85 MByte

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