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FDB15N50 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
TO-263-3
描述:
ON Semiconductor UniFET 系列 Si N沟道 MOSFET FDB15N50, 15 A, Vds=500 V, 3引脚 D2PAK (TO-263)封装
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FDB15N50数据手册
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©2003 Fairchild Semiconductor Corporation
August 2003
FDH15N50 / FDP15N50 / FDB15N50 RevD2
FDH15N50 / FDP15N50 / FDB15N50
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Q
g
results in Simple Drive
Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced r
DS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 500 V
V
GS
Gate to Source Voltage ±30 V
I
D
Drain Current
15 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 11 A
Pulsed
1
60 A
P
D
Power dissipation
Derate above 25
o
C
300
2
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Soldering Temperature for 10 seconds 300 (1.6mm from case)
o
C
R
θJC
Thermal Resistance Junction to Case 0.50
o
C/W
R
θJA
Thermal Resistance Junction to Ambient (TO-247) 40
o
C/W
R
θJA
Thermal Resistance Junction to Ambient (TO-220, TO-263) 62
o
C/W
D
G
S
DRAIN
(FLANGE)
Package
Symbol
DRAIN
SOURCE
GATE
DRAIN
SOURCE
GATE
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
TO-247
FDH SERIES
DRAIN
(BOTTOM)
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