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FDMC86520L 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
分类:
MOS管
封装:
PowerWDFN-8
描述:
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDMC86520L, 22 A, Vds=60 V, 8引脚 MLP封装
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FDMC86520L数据手册
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June 2014
©2011 Fairchild Semiconductor Corporation
FDMC86520L Rev.C1
www.fairchildsemi.com
1
FDMC86520L N-Channel PowerTrench
®
MOSFET
FDMC86520L
N-Channel Power Trench
®
MOSFET
60 V, 22 A, 7.9 mΩ
Features
Max r
DS(on)
= 7.9 mΩ at V
GS
= 10 V, I
D
= 13.5 A
Max r
DS(on)
= 11.7 mΩ at V
GS
= 4.5 V, I
D
= 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 22
A -Continuous T
A
= 25 °C (Note 1a) 13.5
-Pulsed 60
E
AS
Single Pulse Avalanche Energy (Note 3) 79 mJ
P
D
Power Dissipation T
C
= 25 °C 40
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3.1
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86520L FDMC86520L Power 33 13 ’’ 12 mm 3000 units
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