Datasheet 搜索 > MOS管 > ON Semiconductor（安森美） > FDN302P 数据手册 > FDN302P 产品描述及参数 1/5 页
￥ 1.081
FDN302P 产品描述及参数 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-3
描述:
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN302P, 2.4 A, Vds=20 V, 3引脚 SOT-23封装
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
FDN302P数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
October 2000
2000 Fairchild Semiconductor Corporation
FDN302P Rev C(W)
FDN302P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –20 V, –2.4 A. R
DS(ON)
= 0.055 Ω @ V
GS
= –4.5 V
R
DS(ON)
= 0.080 Ω @ V
GS
= –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage
–20
V
V
GSS
Gate-Source Voltage
±12
V
I
D
Drain Current – Continuous (Note 1a)
–2.4
A
– Pulsed
–10
Maximum Power Dissipation (Note 1a) 0.5P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
302 FDN302P 7’’ 8mm 3000 units
FDN302P
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
