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FDN335N 产品描述及参数 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOT-23-3
描述:
FAIRCHILD SEMICONDUCTOR FDN335N 晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
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FDN335N数据手册
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FDN335N
Publication Order Number:
FDN335N/D
FDN335N
N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using ON Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Load switch
Features
• 1.7 A, 20 V. R
DS(ON)
= 0.07 Ω @ V
GS
= 4.5 V
R
DS(ON)
= 0.100 Ω @ V
GS
= 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±
8
V
I
D
Drain Current - Continuous
(Note 1a)
1.7 A
- Pulsed 8
P
D
Power Dissipation for Single Operation
(Note 1a)
0.5 W
(Note 1b)
0.46
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°
C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
335 FDN335N 7’’ 8mm 3000 units
GS
D
G
D
S
SuperSOT -3
TM
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