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FEP30JP 其他数据使用手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
二极管
描述:
双共阴极超快整流器 Dual Common Cathode Ultrafast Rectifier
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FEP30JP数据手册
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Vishay General Semiconductor
FEP30AP thru FEP30JP
Document Number 88597
22-Aug-06
www.vishay.com
1
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, free-wheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
30 A
V
RRM
50 V to 600 V
I
FSM
300 A
t
rr
35 ns, 50 ns
V
F
0.95 V, 1.3 V, 1.5 V
T
j
max. 150 °C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBO
L
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 300 400 500 600 V
Maximum RMS voltage V
RMS
35 70 105 140 210 280 350 420 V
Maximum DC blocking voltage V
DC
50 100 150 200 300 400 500 600 V
Maximum average forward rectified current
at T
C
= 100 °C
I
F(AV)
30 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
300 A
Operating storage and temperature range T
J
,T
STG
- 55 to + 150 °C/W
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