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FGH40N60SMDF数据手册
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PCN# : P5B7AAB
Issue Date : Dec. 08, 2015
Information Only Notification
This is to inform you that a change is being made to the following products.
This is a minor change that has no impact on product quality, reliability, electrical or mechanical performance. Affected
products will remain fully compliant to all published specifications. Notification is being made for informational purposes
only and there is no approval required. Products incorporating this change may be shipped interchangeably with
existing unchanged products on or after the issue date of this notification.
Please contact your local Customer Quality Engineer if you have any questions regarding this notification.
Implementation of change:
Description of Change (From) :
300 units/Inner box
Packt ID HTB Units/Tube
Tube/Inner
Box
SD47T1 300 30 10
Description of Change (To) :
450 units/Inner box
Packt ID HTB Units/Tube
Tube/Inner
Box
SD47T2 450 30 15
Reason for Change:
Packing method standardization to avoid lable mixing
Affected Product(s): Please refer to the list of affected products in the addendum attached in the PCN email you
received. This list is based on an analysis of your companys procurement history.
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FGH40N60SMDF 数据手册

Fairchild(飞兆/仙童)
9 页 / 0.53 MByte
Fairchild(飞兆/仙童)
13 页 / 0.57 MByte
Fairchild(飞兆/仙童)
1 页 / 0.44 MByte

FGH40N60 数据手册

Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FGH40N60SMD  单晶体管, IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-247AB, 3 引脚
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FGH40N60UFDTU  单晶体管, IGBT, 通用, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 引脚
Fairchild(飞兆/仙童)
IGBT,Fairchild Semiconductor### IGBT 分立件和模块,Fairchild Semiconductor绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FGH40N60SMDF  单晶体管, IGBT, 通用, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 引脚
ON Semiconductor(安森美)
分离式 IGBT,Fairchild Semiconductor### IGBT 分立件和模块,Fairchild Semiconductor绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
ON Semiconductor(安森美)
600 V 40 A 场截止 IGBT
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FGH40N60UFTU  单晶体管, IGBT, 80 A, 1.8 V, 290 W, 600 V, TO-247AB, 3 引脚
ON Semiconductor(安森美)
分离式 IGBT,Fairchild Semiconductor### IGBT 分立件和模块,Fairchild Semiconductor绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
ON Semiconductor(安森美)
分离式 IGBT,Fairchild Semiconductor### IGBT 分立件和模块,Fairchild Semiconductor绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FGH40N60SFTU  单晶体管, IGBT, 通用, 80 A, 2.3 V, 290 W, 600 V, TO-247AB, 3 引脚
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