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GT50J301(Q) 其他数据使用手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
IGBT晶体管
封装:
TO-3
描述:
IGBT 分立，Toshiba### IGBT 分立件和模块，Toshiba绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
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GT50J301(Q)数据手册
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GT50J301
2006-11-01
1
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J301
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
z Third generation IGBT
z Enhancement mode type
z High speed : t
f
= 0.30μs (Max.)
z Low saturation voltage : V
CE (sat)
= 2.7V (Max.)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector−Emitter Voltage V
CES
600 V
Gate−Emitter Voltage V
GES
±20 V
DC I
C
50
Collector Current
1ms I
CP
100
A
DC I
F
50
Forward Current
1ms I
FM
100
A
Collector Power Dissipation
(Tc = 25°C)
P
C
200 W
Junction Temperature T
j
150 °C
Storage Temperature T
stg
−55~150 °C
Screw Torque ― 0.8 N · m
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT MARKING
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-21F2C
Weight: 9.75 g (typ.)
GT50J301
TOSHIBA
JAPAN
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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