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GT50J325(Q) 其他数据使用手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
IGBT晶体管
封装:
TO-3
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GT50J325(Q)数据手册
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GT50J325
2006-11-01
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
• Fourth generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: t
f
= 0.05 μs (typ.)
• Low switching loss : E
on
= 1.30 mJ (typ.)
: E
off
= 1.34 mJ (typ.)
• Low saturation Voltage: V
CE (sat)
= 2.0 V (typ.)
• FRD included between emitter and collector
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V
CES
600 V
Gate-emitter voltage V
GES
±20 V
DC I
C
50
Collector current
1 ms I
CP
100
A
DC I
F
50
Emitter-collector forward
current
1 ms I
FM
100
A
Collector power dissipation
(Tc = 25°C)
P
C
240 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance (IGBT) R
th (j-c)
0.521 °C/W
Thermal resistance (diode) R
th (j-c)
2.30 °C/W
Equivalent Circuit Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F2C
Weight: 9.75 g
Gate
Emitter
Collector
GT50J325
TOSHIBA
JAPAN
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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