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HMC659LC5TR-R5
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HMC659LC5TR-R5数据手册
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
1
HMC659LC5
v04.0614
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
General Description
Features
Functional Diagram
Typical Applications
The HMC659LC5 is a GaAs MMIC pHEMT
Distributed Power Amplier which is housed in a
leadless 5 x 5 mm RoHS compliant ceramic SMT
package operating between DC and 15 GHz. The
amplier provides 19 dB of gain, +35 dBm output IP3
and +27.5 dBm of output power at 1 dB gain
compression, while requiring 300mA from a +8V
supply. Gain atness is excellent at ±1.4 dB from
DC - 15 GHz making the HMC659LC5 ideal for EW,
ECM, Radar and test equipment applications. The
HMC659LC5 amplier I/Os are internally matched
to 50 Ohms with no external components. The
HMC659LC5 is compatible with high volume surface
mount manufacturing techniques.
P1dB Output Power: +27.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm
2
The HMC659LC5 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Electrical Specications, T
A
= +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 6 6 - 11 11 - 15 GHz
Gain 16 19 15 18 14 17 dB
Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB
Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C
Input Return Loss 20 18 17 dB
Output Return Loss 19 20 15 dB
Output Power for 1 dB Compression (P1dB) 23.5 26.5 24.5 27.5 23.5 26.5 dBm
Saturated Output Power (Psat) 28.0 28.5 27.5 dBm
Output Third Order Intercept (IP3) 35 32 29 dBm
Noise Figure 3.0 2.5 3.5 dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300 300 300 mA
*Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC659LC5TR-R5 数据手册

Hittite
8 页 / 0.45 MByte

HMC659LC5 数据手册

ADI(亚德诺)
ANALOG DEVICES  HMC659LC5  芯片, 射频放大器, 17DB, 15GHZ, 8V, HQFN-32
Hittite
射频放大器 pow amp SMT, DC - 15 GHz
ADI(亚德诺)
射频放大器, GaAs PHEMT, 17 dB增益/3.5 dB噪声, DC至15 GHz, 8 V/300 mA电源, LFCSP-32
ADI(亚德诺)
射频放大器 pow amp SMT, DC - 15 GHz
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