Datasheet 搜索 > Infineon（英飞凌） > IKW50N65EH5 数据手册 > IKW50N65EH5 产品封装文件 1/2 页
￥ 13.177
IKW50N65EH5 产品封装文件 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-247-3
描述:
IGBT管/模块 IKW50N65EH5 TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
IKW50N65EH5数据手册
Page:
of 2 Go
若手册格式错乱，请下载阅览PDF原文件
Bodo´s Power Systems
®
December 2014 www.bodospower.com34
CONTENT
Recent improvements in the IGBT technologies have reduced the
switching losses of the devices considerably. This has been achieved
through changes in the structure of the IGBT chip. Figure 1 presents
a comparison of switching energies of discrete 50A rated IGBTs from
different technologies. The IGBT and the co-packed diode technolo-
gies are indicated at the bottom of Figure 1, as well as the year in
which they have been brought to the market. The energy has been
measured in a switching cell, using a device from the same family and
of identical current rating as counterpart.
A deeper look inside Figure 1 reveals how impressively the turn-off
energy of the IGBTs has decreased in the recent families. This has
been achieved by decreasing the fall time of the current during turn-
off, thus removing the tail current almost completely.
On the other hand, turn-on energy has practically not changed. One
of the main reasons for this is the fact that the turn-on behavior of the
IGBT is strongly depending on the counterpart diode and its amount
of reverse recovery charge. Actually, the amount of recovery charge
tends to increase when the diode is combined with a faster IGBT, thus
increasing the switch’s turn-on losses.
To achieve a considerable reduction of turn-on losses, the TO-247
4pin package is now being introduced for devices of the TRENCH-
STOP 5 family. This package contains an extra emitter pin to be
connected exclusively to the control loop and has already been
successfully used in combination with super junction MOSFETs from
CoolMOS™ C7 technology[1].
With the Kelvin emitter conguration, the switching speed is increased
further. Consequently, the switching losses are reduced in both
anks, even if the same counterpart diode remains in use. As one of
the advantages, the adoption of the TO-247 4 increases the overall
system efciency and allows the IGBT device to operate at lower
temperature.
The Kelvin Emitter Configuration
In standard through-hole packages, as for instance TO-220 or TO-
247, each lead pad resembles a parasitic inductance. The inductance
from the emitter pad in particular is a part of both, power and control
loops.
The power loop also includes the parasitic inductances coming from
the collector lead and from the PCB tracks which connect the switch-
ing devices to the DC-link capacitor. The gate loop contains the induc-
tances coming from the gate lead and from the PCB tracks which con-
Kelvin Emitter Conguration
Further Improves Switching
Performance of
TRENCHSTOP™ 5 IGBTs
TO-247 4pin package with Kelvin emitter enables faster commutation, improving the
switching behavior of the 650V TRENCHSTOP™ 5 IGBTs. Dynamic losses are reduced by
20% in comparison to standard TO-247 package, thus increasing the overall system effi-
ciency and enabling the IGBTs to operate at lower temperature.
By Vladimir Scarpa and Fabio Brucchi, Infineon Technologies AG
IGBTS
Switching Energy of 50A rated IGBTs in TO-247 @ I
SW
=25A, T
C
=25°C
0
0.5
1
1.5
2
TRENCHSTOP™ / EC
Diode
HighSpeed 3 / EC
Diode
TRENCHSTOP™ 5 /
Rapid 1 Diode
TRENCHSTOP™ 5
/Rapid 1 Diode
Switching Energy [mJ]
Turn-On Losses
Turn-Off Losses
0.92 mJ
=
100% E
off
103%
30%
98%
20%
18%
83%
2012
2014
2010
2006
TO-247 4pin
0.67 mJ
=
100% E
on
TO-247
Figure 1: Switching losses of 50A rated IGBT devices, switching
conditions: IC=25A, Tj=25°C
C
E
1
E
2
G
Emitter
Collector
Gate
V
DRV
C
E
1
R
G
I
G
PWM
E
2
G
Figure 2: IGBT connection in Kelvin emitter conguration
0
2000
4000
6000
8000
10000
0 25 50 75 100
E
tot
[µJ]
I
C(sw)
[A]
IKZ50N65H5 - E
tot
Comp. F
3pin
4pin
E
1
E
2
3pin
Configuration
Figure 3: Total switching energy of an IKZ50N65EH5 in both, 3pin and
4pin congurations
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
