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IRF9640PBF 其他数据使用手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
MOS管
封装:
TO-220
描述:
VISHAY IRF9640PBF 晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
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IRF9640PBF数据手册
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若手册格式错乱，请下载阅览PDF原文件
Document Number: 91086 www.vishay.com
S11-0513-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9640, SiHF9640
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, starting T
J
= 25 °C, L = 8.7 mH, R
g
= 25 Ω, I
AS
= - 11 A (see fig. 12).
c. I
SD
≤ - 11 A, dI/dt ≤ 150 A/μs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) - 200
R
DS(on)
(Ω)V
GS
= - 10 V 0.50
Q
g
(Max.) (nC) 44
Q
gs
(nC) 7.1
Q
gd
(nC) 27
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF9640PbF
SiHF9640-E3
SnPb
IRF9640
SiHF9640
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
- 200 V
Gate-Source Voltage V
GS
± 20 V
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 11
AT
C
= 100 °C - 6.8
Pulsed Drain Current
a
I
DM
- 44
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
700 mJ
Repetitive Avalanche Current
a
I
AR
- 11 A
Repetitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
125 W
Peak Diode Recovery dV/dt
c
dV/dt - 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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