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IRFP240 其他数据使用手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
N沟道MOS管
封装:
TO-247-3
描述:
功率MOSFET Power MOSFET
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IRFP240数据手册
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若手册格式错乱，请下载阅览PDF原文件
Document Number: 91210 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFP240, SiHFP240
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 1.9 mH, R
g
= 25 , I
AS
= 20 A (see fig. 12).
c. I
SD
18 A, dI/dt 150 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
()V
GS
= 10 V 0.18
Q
g
(Max.) (nC) 70
Q
gs
(nC) 13
Q
gd
(nC) 39
Configuration Single
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
IRFP240PbF
SiHFP240-E3
SnPb
IRFP240
SiHFP240
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
20
A
T
C
= 100 °C 12
Pulsed Drain Current
a
I
DM
80
Linear Derating Factor 1.2 W/°C
Single Pulse Avalanche Energy
b
E
AS
510 mJ
Repetitive Avalanche Current
a
I
AR
20 A
Repetitive Avalanche Energy
a
E
AR
15 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
150 W
Peak Diode Recovery dV/dt
c
dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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